Quartz Tube Semiconductor Grade Clear Fused Silica For Diffusion Furnace Wafer Process Vacuum Sealing Laboratory Custom Size
Détails du produit
| Densité: | 2,2 g / cm3 | Point de fusion: | 1750-1850 ℃ |
|---|---|---|---|
| Point de recuit: | 1180 ℃ | Matériel: | SiO2> 99,99% |
| Point de tension: | 1100℃ | Dureté: | Morse 6.5 |
Description du produit
Points forts du produit
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